Infineon IPD30N03S4L-14: High-Performance 30V N-Channel MOSFET for Power Management Applications

Release date:2025-10-31 Number of clicks:85

Infineon IPD30N03S4L-14: High-Performance 30V N-Channel MOSFET for Power Management Applications

In the realm of modern electronics, efficient power management is a critical determinant of system performance, reliability, and energy consumption. The Infineon IPD30N03S4L-14 stands out as a premier solution, engineered to meet the rigorous demands of contemporary power management applications. This 30V N-channel MOSFET leverages advanced semiconductor technology to deliver exceptional efficiency, thermal performance, and reliability in a compact package.

A key attribute of the IPD30N03S4L-14 is its remarkably low on-state resistance (RDS(on)), which is typically just 3.0 mΩ at 10 V. This ultra-low resistance is pivotal for minimizing conduction losses, thereby enhancing overall system efficiency and reducing heat generation. Such performance is particularly vital in high-current applications like DC-DC converters, motor control circuits, and load switching systems, where every milliohm counts towards energy savings and thermal management.

The device is optimized for high-frequency switching operations, making it an ideal choice for switch-mode power supplies (SMPS) and voltage regulation modules. Its low gate charge (Qg) and excellent figure of merit (FOM) ensure rapid switching transitions, which are essential for reducing switching losses and enabling higher operating frequencies. This allows for the design of smaller, more compact power systems by permitting the use of smaller passive components like inductors and capacitors.

Housed in the space-efficient SuperSO8 package, the IPD30N03S4L-14 offers an excellent power-to-size ratio. This package is renowned for its superior thermal characteristics, facilitating effective heat dissipation and enabling higher power density designs. The robust construction ensures long-term reliability even under demanding operating conditions, making it suitable for automotive, industrial, and consumer electronics applications.

Furthermore, the MOSFET incorporates advanced protection features, safeguarding against overcurrent, overtemperature, and electrostatic discharge (ESD). These integrated protections enhance system durability and reduce the need for additional external components, simplifying design and lowering overall bill-of-material costs.

ICGOODFIND: The Infineon IPD30N03S4L-14 is a superior 30V N-channel MOSFET that sets a high benchmark for power management. Its combination of ultra-low RDS(on), exceptional switching performance, and robust thermal characteristics in the SuperSO8 package makes it an indispensable component for engineers striving to create efficient, reliable, and compact power solutions.

Keywords: Power Management, Low RDS(on), High-Frequency Switching, SuperSO8 Package, Thermal Efficiency.

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