Infineon IPI80N04S4-03: High-Performance N-Channel MOSFET for Power Management Applications

The relentless pursuit of higher efficiency, greater power density, and improved thermal performance is a constant driver in the world of electronics design. At the heart of many power management systems, from advanced computing and telecom infrastructure to industrial motor drives and automotive applications, lies the MOSFET. The Infineon IPI80N04S4-03 stands out as a premier N-Channel power MOSFET engineered to meet these demanding challenges head-on.

Built on Infineon's advanced OptiMOS™ power technology platform, this component sets a high bar for performance. With a drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 80 A at 100°C, it is specifically designed to handle significant power levels with remarkable robustness. A key to its efficiency is its exceptionally low typical on-state resistance (RDS(on)) of just 1.8 mΩ at 10 V. This minimized resistance is critical, as it directly translates to reduced conduction losses. When a MOSFET is in its on-state, lower RDS(on) means less energy is wasted as heat, leading to cooler operation and significantly higher overall system efficiency.

Furthermore, the device features low total gate charge (Qg) and low reverse recovery charge (Qrr). These characteristics are vital for high-frequency switching applications. A lower gate charge allows for faster switching speeds and reduces the drive power required from the controller IC, simplifying gate driver design. The improved reverse recovery behavior minimizes switching losses, which is particularly beneficial in circuits like synchronous rectification in switch-mode power supplies (SMPS) and DC-DC converters. This combination of low RDS(on) and superior switching performance makes the IPI80N04S4-03 an ideal choice for demanding applications.

The MOSFET is offered in the space-saving SuperSO8 package, which provides an excellent balance between compact size and thermal efficiency. This package is designed to minimize parasitic inductance, further enhancing switching performance. Its exposed pad allows for efficient heat dissipation to the PCB, enabling designers to manage thermal loads effectively even in high-power-density layouts. This makes it suitable for modern applications where board space is at a premium.

ICGOOODFIND: The Infineon IPI80N04S4-03 is a high-performance N-Channel MOSFET that excels in power management by delivering an optimal blend of extremely low on-state resistance, superior switching characteristics, and robust thermal performance in a compact package, making it a top-tier solution for enhancing efficiency in a wide array of power electronics.

Keywords: OptiMOS™, Low RDS(on), High Efficiency, Power Management, SuperSO8 Package.