Infineon IPB048N15N5LF OptiMOS 5 Power MOSFET: Datasheet, Application Circuit, and Key Features
The Infineon IPB048N15N5LF is a state-of-the-art N-channel power MOSFET belonging to the OptiMOS™ 5 technology family. Designed for exceptional efficiency and power density in demanding applications, this component sets a new benchmark in performance for power conversion systems. Its advanced super-junction structure enables ultra-low on-state resistance (RDS(on)) and significantly reduced switching losses, making it an ideal choice for high-frequency switching circuits.
Key Features and Benefits
A primary advantage of the IPB048N15N5LF is its extremely low figure-of-merit (RDS(on) x QG). With a maximum drain-to-source voltage (VDS) of 150V and a continuous drain current (ID) of 240A at 25°C, it delivers robust power handling in a compact D2PAK (TO-263) package. Its low gate charge (QG) ensures fast switching transitions, which is critical for minimizing switching losses in high-frequency designs. This leads to cooler operation, higher system efficiency, and the potential for reduced heatsinking requirements. Furthermore, the device offers enhanced avalanche ruggedness and is qualified for automotive applications according to AEC-Q101, ensuring high reliability under stressful operating conditions.
Typical Application Circuit
A common application for the IPB048N15N5LF is in a synchronous buck converter, the workhorse of point-of-load (POL) voltage regulation in servers, telecom equipment, and automotive systems. In this circuit, the IPB048N15N5LF is typically used as the low-side synchronous rectifier MOSFET. Its low RDS(on) is paramount here, as it directly minimizes conduction losses during the freewheeling phase of the switching cycle. A driver IC is essential to provide the necessary voltage and current to rapidly charge and discharge the MOSFET's gate. The PCB layout must be optimized for low parasitic inductance to prevent voltage spikes and ensure stable operation.
Datasheet Overview
The datasheet for the IPB048N15N5LF provides all critical information for design-in. Key sections include:
Absolute Maximum Ratings: Defining the operational boundaries for voltage, current, and temperature.
Electrical Characteristics: Detailed tables for parameters like RDS(on), gate threshold voltage (VGS(th)), and capacitance values (Ciss, Coss, Crss).
Switching Characteristics: Graphs and test conditions showcasing turn-on/off delay and rise/fall times.
Safe Operating Area (SOA): Charts illustrating the current and voltage limits for safe operation.
Package Information: Mechanical drawings and dimensions for the D2PAK package.
ICGOOODFIND Summary
The Infineon IPB048N15N5LF OptiMOS 5 MOSFET is a high-efficiency powerhouse designed for demanding power conversion tasks. Its standout features include an ultra-low RDS(on) for minimal conduction losses, fast switching capability for high-frequency operation, and automotive-grade reliability. It is an exceptional choice for engineers designing high-performance SMPS, motor drives, and DC-DC converters where efficiency, power density, and robustness are critical.
Keywords:
1. OptiMOS 5
2. Power MOSFET
3. Low RDS(on)
4. High Efficiency
5. Automotive Grade
